transistor(pnp) features z compliment to pxt3904 z low current z low voltage marking: 2a maximum ratings (t a =25 unless otherwise noted) symbol paramete r v alue units v cbo collector-base voltage -40 v v ceo collector-emitter voltage -40 v v ebo emitter-base voltage -6 v i c collector current -continuous -0.2 a p c collector power dissipation 0.5 w t j junction temperature 150 t st g storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-10 a,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -40 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -6 v collector cut-off current i cbo v cb =-30v,i e =0 -0.05 a cut-off current i ebo v eb =-6v,i c =0 -0.05 a h fe(1) v ce =-1v,i c =-0.1ma 60 h fe(2) v ce =-1v,i c =-1ma 80 h fe(3) v ce =-1v,i c =-10ma 100 300 h fe(4) v ce =-1v,i c =-50ma 60 dc current gain h fe(5) v ce =-1v,i c =-100ma 30 v ce(sat)1 i c =-10ma,i b =-1ma -0.25 v collector-emitter saturation voltage v ce(sat)2 i c =-50ma,i b =-5ma -0.4 v v be(sat)1 i c =-10ma,i b =-1ma -0.65 -0.85 v base-emitter saturation voltage v be(sat)2 i c =-50ma,i b =-5ma -0.95 v transition frequency f t v ce =-20v,i c =-10ma,f=100mhz 250 mhz collector capacitance c c v cb =-5v,i e =0,f=1mhz 4.5 pf emitter capacitance ce v eb =-0.5v,i c =0,f=1mhz 10 pf noise figure nf v ce =-5v,i c =-0.1ma,f=10hz-15.7khz, r s =1k ? 4 db delay time t d 35 ns rise time t r 35 ns storage time t s 225 ns fall time t f i c =-10ma , i b1 =-i b2 = -1ma 75 ns sot-89 1. base 2. collector 3. emitter 1 2 3 PXT3906 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics PXT3906 2 date:2011/05 www.htsemi.com semiconductor jinyu
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